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CAS No 25617-97-4 , azanylidynegallane

  • Name: azanylidynegallane
  • Synonyms: 25617-97-4;Gallium mononitride; EINECS 247-129-0; azanylidynegallane; nitridogallium; AC1L3L4B; 12024-03-2; Gallium nitride (GaN);azanylidynegallane;
  • CAS Registry Number:
  • Density: ~ 6.1
  • Water Solubility: REACTS with water
  • Safety Statements: 22-24/25 37.
  • EINECS: 247-129-0
  • Molecular Weight: 83.7297
  • InchiKey: JMASRVWKEDWRBT-UHFFFAOYSA-N
  • InChI: InChI=1S/Ga.N
  • Risk Statements: R36, R37, R38, R43.
  • Molecular Formula: GaN
  • Molecular Structure:CAS No:25617-97-4 azanylidynegallane
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25617-97-4 GALLIUM (III) NITRIDE, 99.99% (METALS BASIS)

  • Hong kong Advanced Technology & Industrial Co., Ltd. [Manufacturer]
  • Tel: (852) 2390 2293/ (852) 2394 5546
  • Fax: (852) 2789 8314
  • Address: Unit B, 1/F., Cheong Shing Bldg.,
    17 Walnut St., Tai Kok Tsui, Kln,
    Hong Kong ,Hong kong
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25617-97-4 GALLIUM(III) NITRIDE

  • GALLIUM(III) NITRIDE, 99.99% (METALS BASIS)
  • United States INTERNATIONAL LABORATORY LIMITED [Manufacturer]
  • Tel: ( 650 ) 278-9963
  • Fax: ( 650 ) 589-2786
  • Address: 1067 SNEATH LN SAN BRUNO CA 94066, USA SAN BRUNOUNITED STATES SAN BRUNO,United States
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25617-97-4 G-1030 GALLIUM NITRIDE

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25617-97-4 Gallium Nitride

  • India Triveni Chemicals []
  • Tel: +91-(260)-2400022, 3258683
  • Fax: +91-(260)-2400022/3264008
  • Address: 135, Pancharatna, Char Rasta, G.I.D.C., Vapi, Gujarat 396 195, ,India
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25617-97-4 (0545) GALLIUM (III) NITRIDE

  • Germany Fox Chemicals GmbH [Manufacturer]
  • Tel: +49.7240.927151/ +49.160.95781845 (Mobile)
  • Fax: +49.7240.927150
  • Address: Fox Chemicals GmbH
    Bockstalstr.10 A
    D-76327 Pfinztal-Germany ,Germany
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25617-97-4 GALLIUM NITRIDE, -100 MESH

  • United States ProChem, Inc. [Manufacturer]
  • Tel: 800-795-8788
  • Address: ProChem, Inc.
    826 Roosevelt Rd.
    Rockford IL 61109 ,United States
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25617-97-4 Gallium (III) Nitride

  • Gallium (III) Nitride
  • Germany Fox Chemicals [Manufacturer]
  • Tel: +49-7240-927151
  • Fax: +49-7240-927150
  • Address: Bockstalstr. 10A76327 Pfinztal-Kst.GERMANY Pfinztal-Kst.,Germany
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25617-97-4 Gallium Nitride

  • China Beijing Cerametek Materials Co. Ltd. [Manufacturer]
  • Tel: +86-10-6156.6641
  • Fax: +86-10-6156.1674
  • Address: Beijing Cerametek Materials Co. Ltd.
    2-E051, BPE, W. NongLin Rd.,
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    China ,China
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25617-97-4 Gallium(III) nitride, 99.99% (metals basis)

  • Gallium(III) nitride, 99.99% (metals basis)
  • Germany CHEMOS GmbH [Manufacturer]
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  • Address: CHEMOS GmbH
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    Germany ,Germany
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25617-97-4 GALLIUM(III) NITRIDE

  • China Nanjing Chemlin Chemical Industry Co.,Ltd. [Manufacturer]
  • Tel: +86 25 8369-7070/ +86 138 51816776 (Mobile)
  • Fax: +86 25 8345-3275
  • Address: Rm.902 Longyin Plaza,
    No. 217 Zhongshan Rd.
    (N)Nanjing 210009,China ,China
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References of azanylidynegallane
Title: Gallium Nitride
CAS Registry Number: 25617-97-4
Synonyms: Gallium mononitride
Molecular Formula: GaN
Molecular Weight: 83.73
Percent Composition: Ga 83.27%, N 16.73%
Literature References: Semiconductor material. Prepn: W. C. Johnson et al., J. Phys. Chem. 36, 2651 (1932); and wurtzite structure determn: R. Juza, H. Hahn, Z. Anorg. Allg. Chem. 239, 282 (1938). Prepn of single crystalline GaN by vapor deposition: H. P. Maruska, J. J. Tietjen, Appl. Phys. Lett. 15, 327 (1969). Luminescence studies: H. G. Grimmeiss, H. Koelmans, Z. Naturforsch. 14a, 264 (1959). P-type doping: H. Amano et al., Jpn. J. Appl. Phys. 28, L2112 (1989). Fabrication of blue light emitting diodes (LEDs): S. Nakamura et al., ibid. 30, L1998 (1991). Potential use of GaN LEDs in phototherapy for jaundice: D. S. Seidman et al., J. Pediatr. 136, 771 (2000). Review of properties and crystal growth techniques: S. Strite, H. Morko?, J. Vac. Sci. Technol. B 10, 1237-1266 (1992); and applications: S. Keller, S. P. Denbaars, Curr. Opin. Solid State Mater. Sci. 3, 45-50 (1997); S. J. Pearton et al., Materials Today 5, 24-31 (June, 2002); of thin film growth techniques and optical properties: R. F. Davis et al., Proc. IEEE 90, 993-1004 (2002).
Properties: Equilibrium crystal structure is hexagonal wurtzite; lattice constants at 300 K: a = 3.189 ?; c = 5.185 ?. Less thermodynamically stable cubic zinc blende structures can be grown on cubic substrates; lattice constant a = 4.503 ?. mp 2500° (2800 K). Thermal conductivity: 1.3 W/cm K. Bandgap at 300 K: 3.39 eV. n (1 eV) = 2.33. n (3.38 eV) = 2.67. Exceedingly chemically and thermally stable. Insol in H2O, acids, and bases at room temp. Dissolves slowly in hot alkalis.
Melting point: Equilibrium crystal structure is hexagonal wurtzite; lattice constants at 300 K: a = 3.189 ?; c = 5.185 ?. Less thermodynamically stable cubic zinc blende structures can be grown on cubic substrates; lattice constant a = 4.503 ?. mp 2500° (2800 K)
Index of refraction: n (1 eV) = 2.33; n (3.38 eV) = 2.67
Use: Blue and UV light emitter with applications in semiconductor devices including: LEDs, laser diodes, lighting, displays, and data storage.