Title: Gallium Nitride
CAS Registry Number: 25617-97-4
Synonyms: Gallium mononitride
Molecular Formula: GaN
Molecular Weight: 83.73
Percent Composition: Ga 83.27%, N 16.73%
Literature References: Semiconductor material. Prepn: W. C. Johnson
et al., J. Phys. Chem. 36, 2651 (1932); and wurtzite structure determn: R. Juza, H. Hahn,
Z. Anorg. Allg. Chem. 239, 282 (1938). Prepn of single crystalline GaN by vapor deposition: H. P. Maruska, J. J. Tietjen,
Appl. Phys. Lett. 15, 327 (1969). Luminescence studies: H. G. Grimmeiss, H. Koelmans,
Z. Naturforsch. 14a, 264 (1959). P-type doping: H. Amano
et al., Jpn. J. Appl. Phys. 28, L2112 (1989). Fabrication of blue light emitting diodes (LEDs): S. Nakamura
et al., ibid. 30, L1998 (1991). Potential use of GaN LEDs in phototherapy for jaundice: D. S. Seidman
et al., J. Pediatr. 136, 771 (2000). Review of properties and crystal growth techniques: S. Strite, H. Morko?,
J. Vac. Sci. Technol. B 10, 1237-1266 (1992); and applications: S. Keller, S. P. Denbaars,
Curr. Opin. Solid State Mater. Sci. 3, 45-50 (1997); S. J. Pearton
et al., Materials Today 5, 24-31 (June, 2002); of thin film growth techniques and optical properties: R. F. Davis
et al., Proc. IEEE 90, 993-1004 (2002).
Properties: Equilibrium crystal structure is hexagonal wurtzite; lattice constants at 300 K:
a = 3.189 ?;
c = 5.185 ?. Less thermodynamically stable cubic zinc blende structures can be grown on cubic substrates; lattice constant
a = 4.503 ?. mp 2500° (2800 K). Thermal conductivity: 1.3 W/cm K. Bandgap at 300 K: 3.39 eV.
n (1 eV) = 2.33.
n (3.38 eV) = 2.67. Exceedingly chemically and thermally stable. Insol in H2O, acids, and bases at room temp. Dissolves slowly in hot alkalis.
Melting point: Equilibrium crystal structure is hexagonal wurtzite; lattice constants at 300 K:
a = 3.189 ?;
c = 5.185 ?. Less thermodynamically stable cubic zinc blende structures can be grown on cubic substrates; lattice constant
a = 4.503 ?. mp 2500° (2800 K)
Index of refraction: n (1 eV) = 2.33;
n (3.38 eV) = 2.67
Use: Blue and UV light emitter with applications in semiconductor devices including: LEDs, laser diodes, lighting, displays, and data storage.
